silicon pin photodiode, rohs compliant www.vishay.com for technical questions, contact: detectortechsupport@vishay.com document number: 81502 334 rev. 1.6, 08-sep-08 BPV10 vishay semiconductors description BPV10 is a pin photodiode wit h high speed and high radiant sensitivity in clear, t-1? plas tic package. it is sensitive to visible and near infrared radiation. features ? package type: leaded ? package form: t-1? ? dimensions (in mm): ? 5 ? leads with stand-off ? radiant sensitive area (in mm 2 ): 0.78 ? high photo sensitivity ? high radiant sensitivity ? suitable for visible and near infrared radiation ? high bandwidth: 250 mhz at v r = 12 v ? fast response times ? angle of half sensitivity: ? = 20 ? lead (pb)-free component in accordance with rohs 2002/95/ec and weee 2002/96/ec applications ? high speed photo detector note test condition see table ?basic characteristics? note moq: minimum order quantity note t amb = 25 c, unless otherwise specified 94 8 390 product summary component i ra (ma) ? (deg) 0.1 (nm) BPV10 70 20 380 to 1100 ordering information ordering code packaging remarks package form BPV10 bulk moq: 4000 pcs, 4000 pcs/bulk t-1? absolute maximum ratings parameter test condition symbol value unit reverse voltage v r 10 v power dissipation t amb 25 c p v 215 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 40 to + 100 c soldering temperature t 5 s, 2 mm from body t sd 260 c thermal resistance junction/ambient connected with cu wire, 0.14 mm 2 r thja 350 k/w
document number: 81502 for technical questi ons, contact: detectortechsupport@vishay.com www.vishay.com rev. 1.6, 08-sep-08 335 BPV10 silicon pin photodiode, rohs compliant vishay semiconductors note t amb = 25 c, unless otherwise specified basic characteristics t amb = 25 c, unless otherwise specified fig. 1 - reverse dark current vs. ambient temperature fig. 2 - relative reverse light current vs. ambient temperature basic characteristics parameter test condition symbol min. typ. max. unit forward voltage i f = 50 ma v f 1.0 1.3 v breakdown voltage i r = 100 a, e = 0 v (br) 60 v reverse dark current v r = 20 v, e = 0 i ro 15na diode capacitance v r = 0 v, f = 1 mhz, e = 0 c d 11 pf v r = 5 v, f = 1 mhz, e = 0 c d 3.8 pf open circuit voltage e a = 1 klx v o 480 mv e e = 1 mw/cm 2 , = 950 nm v o 450 mv short circuit current e a = 1 klx i k 80 a e e = 1 mw/cm 2 , = 950 nm i k 65 a reverse light current e a = 1 klx, v r = 5 v i ra 85 a e e = 1 mw/cm 2 , = 950 nm, v r = 5 v i ra 38 70 a absolute spectral sensitivity v r = 5 v, = 950 nm s( ) 0.55 a/w angle of half sensitivity ? 20 deg wavelength of peak sensitivity p 920 nm range of spectral bandwidth 0.1 380 to 1100 nm quantum efficiency = 950 nm 72 % noise equivalent power v r = 20 v, = 950 nm nep 3 x 10 -14 w/ hz detectivity v r = 20 v, = 950 nm d 3 x 10 12 cm hz/w rise time v r = 50 v, r l = 50 , = 820 nm t r 2.5 ns fall time v r = 50 v, r l = 50 , = 820 nm t f 2.5 ns 20 40 60 8 0 1 10 100 1000 i ro - re v erse dark c u rrent (na) t am b - am b ient temperat u re (c) 100 94 8 436 v r = 20 v 0.6 0. 8 1.0 1.2 1.4 i ra, rel - relati v e re v erse light c u rrent t am b - am b ient temperat u re (c) 94 8 416 v r = 5 v = 950 nm 0 100 8 0 60 40 20
www.vishay.com for technical questions, contact: detectortechsupport@vishay.com document number: 81502 336 rev. 1.6, 08-sep-08 BPV10 vishay semiconductors silicon pin photodiode, rohs compliant fig. 3 - reverse light current vs. irradiance fig. 4 - reverse light current vs. reverse voltage fig. 5 - diode capacitance vs. reverse voltage fig. 6 - relative spectral sensitivity vs. wavelength fig. 7 - relative radiant sensitivity vs. angular displacement 0.01 0.1 1 0.1 1 10 100 1000 i-re v erse light c u rrent ( a) ra e e - irradiance (m w /cm 2 ) 10 94 8 437 v r = 5 v = 950 nm 0.1 1 10 1 10 100 v r -re v erse v oltage ( v ) 100 94 8 43 8 i-re v erse light c u rrent ( a) ra 1m w /cm 2 0.5 m w /cm 2 0.2 m w /cm 2 0.1 m w /cm 2 0.05 m w /cm 2 0.02 m w /cm 2 = 950 nm 0 2 4 6 8 12 10 0.1 1 10 c d - diode capacitance (pf) v r - re v erse v oltage ( v ) 100 94 8 439 e = 0 f = 1 mhz 350 550 750 950 0 0.2 0.4 0.6 0. 8 1.0 1150 94 8 440 s ( ) - relati v e spectral sensiti v ity rel - w a v elength (nm) 0.4 0.2 0 s - relati v e sensiti v ity rel 94 8 624 0.6 0.9 0. 8 0 30 10 20 40 50 60 70 8 0 0.7 1.0 ? - ang u lar displacement
document number: 81502 for technical questi ons, contact: detectortechsupport@vishay.com www.vishay.com rev. 1.6, 08-sep-08 337 BPV10 silicon pin photodiode, rohs compliant vishay semiconductors package dimensions in millimeters iss u e:1; 01.07.96 dra w ing- n o.: 6.544-51 8 5.02-4 specifications according to di n technical dra w ings area not plane chip position 0.5 + 0.15 r 2.45 (sphere) 5.75 0.15 7.6 0.15 8 .6 0.3 11. 8 0.3 34. 8 0.5 1.5 0.25 ? 5 0.15 (4.3) < 0.7 0. 8 + 0.2 - 0.1 1 + 0.2 - 0.1 0.63 + 0.2 - 0.1 2.54 nom. ca 96 12199
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